Third and fourth generation SiC Schottky Barrier Diodes (SBD) offer superior performance and reliability, providing higher efficiency, higher operating temperatures, and lower losses compared to silicon-based solutions.

It supports high-frequency operation with zero recovery during turn-off and maintains low leakage current at reverse voltages up to 650V. This technology contributes to miniaturization and lightweight system design. The RoHS-compliant components are suitable for industrial applications.

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